NTUD3127C
TYPICAL PERFORMANCE CURVES ? N ? CHANNEL
15
1000
12
V GS = 0 V
T J = 25 ° C
V DD = 10 V
I D = 200 mA
V GS = 4.5 V
9
6
3
C iss
C oss
100
10
t d(off)
t f
t r
t d(on)
0
0 2
4 6 8 10
12
14 16
C rss
18
20
1
1
10
100
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
R G , GATE RESISTANCE (OHMS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.2
V GS = 0 V
T J = 25 ° C
0.15
0.1
0.05
0
0
0.2
0.4
0.6
0.8
1.0
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
http://onsemi.com
5
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相关代理商/技术参数
NTUD3128N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 200 mA, Dual N-Channel, 1.0 mm x 1.0 mm SOT-963 Package
NTUD3128NT5G 功能描述:MOSFET SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD3129P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package
NTUD3129PT5G 功能描述:MOSFET SMALL SIGNAL MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTUD3169CZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package
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NTUD3170NZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Package
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